INFLUENCE OF RADIATION ON PHOTOVOLTAIC PROPERTIES OF STRUCTURES WITH POROUS SILICON

The relevance of the work is justified by the rapid growth in the development of the space industry in recent years, in particular, the development of solar cell technology designed to power aircraft in near-Earth orbit or beyond. It is important to study the degradation of porous silicon-based solar cells. It has proven itself to be a more radiation-resistant structure. A comparative analysis of the current-voltage characteristics of photosensitive structures based on porous silicon with a p-n junction coated with and without erbium fluoride is presented before and after irradiation with electrons with an energy of 6 MeV, as well as after three months of storage to record changes that may occur over time. The structures were obtained by electrochemical etching in an alcoholic solution of hydrofluoric acid by two-stage metal-stimulated chemical etching. The results obtained show that the result of the effect of electron radiation on photosensitive structures depends both on the
parameters of the structure itself and on the radiation parameters. Electron irradiation initiates the formation of alloying centers and recombination centers in structures. It is shown that irradiation of structures leads to competing processes in porous structures (an increase in charge carriers, the formation of radiation defects such as Frenkel pairs). The applied thin film of erbium fluoride on the porous layer has a noticeable positive effect on the characteristics and parameters of structures due to the passivating properties of this material.

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